IDT06S60C - Infineon Technologies

Manufacturer Part Number

IDT06S60C

Manufacturer

Infineon Technologies

Introduction

High-performance SiC Schottky diode

Product Features and Performance

Extremely low reverse recovery time of 0 ns

Very low forward voltage drop of 1.7 V @ 6 A

Wide operating temperature range of -55°C to 175°C

High reverse voltage capability of 600 V

Low leakage current of 80 μA @ 600 V

Low junction capacitance of 280 pF @ 1 V, 1 MHz

Product Advantages

Highly efficient power conversion

Improved system reliability

Reduced power losses

Compact and lightweight design

Key Technical Parameters

Current Average Rectified (Io): 6A (DC)

Voltage DC Reverse (Vr) (Max): 600 V

Capacitance @ Vr, F: 280pF @ 1V, 1MHz

Reverse Recovery Time (trr): 0 ns

Operating Temperature Junction: -55°C ~ 175°C

Quality and Safety Features

RoHS3 compliant

Suitable for through-hole mounting

Reliable and durable construction

Compatibility

Suitable for a wide range of power electronics applications

Application Areas

Power supplies

Motor drives

Renewable energy systems

Industrial electronics

Product Lifecycle

This product is currently available and not nearing discontinuation.

Replacement or upgrade options may be available from Infineon Technologies.

Key Reasons to Choose This Product

Exceptional performance with extremely low reverse recovery time and forward voltage drop

Wide operating temperature range and high reverse voltage capability

Compact and efficient design for improved system reliability

Compliance with RoHS3 environmental regulations

Suitability for a wide range of power electronics applications