Manufacturer Part Number
IDT12S60C
Manufacturer
Infineon Technologies
Introduction
The IDT12S60C is a Silicon Carbide (SiC) Schottky Diode in a TO-220-2 package, designed for high-frequency, high-efficiency power conversion applications.
Product Features and Performance
Extremely fast switching speed with zero reverse recovery time
Low forward voltage drop and low leakage current
High voltage rating of 600V
High average rectified current of 12A
Operates at junction temperatures up to 175°C
Product Advantages
Improved energy efficiency in power conversion systems
Reduced switching losses and electromagnetic interference (EMI)
Compact and robust design for reliable operation
Key Technical Parameters
Current Reverse Leakage @ Vr: 160 A @ 600 V
Voltage Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Reverse Recovery Time (trr): 0 ns
Capacitance @ Vr, F: 530pF @ 1V, 1MHz
Voltage DC Reverse (Vr) (Max): 600 V
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Through-hole mount package (TO-220-2)
Application Areas
Switching power supplies
Power factor correction circuits
Inverters and converters
Motor drives
Renewable energy systems
Product Lifecycle
The IDT12S60C is an active product with no indication of discontinuation.
Replacement or upgrade options may be available from Infineon Technologies.
Key Reasons to Choose This Product
Excellent energy efficiency and reduced switching losses
Reliable high-temperature operation up to 175°C
Compact and robust design for demanding applications
Fast switching speed and zero reverse recovery time
High voltage rating and average rectified current
