Manufacturer Part Number
IDB10S60C
Manufacturer
Infineon Technologies
Introduction
The IDB10S60C is a high-performance Silicon Carbide (SiC) Schottky diode from Infineon Technologies.
Product Features and Performance
Very low reverse recovery time (0 ns)
Extremely low forward voltage drop (1.7 V @ 10 A)
High reverse voltage capability (600 V)
High average rectified current (10 A)
Wide operating temperature range (-55°C to 175°C)
Low capacitance (480 pF @ 1 V, 1 MHz)
Product Advantages
Excellent efficiency and energy savings
High-frequency switching capabilities
Compact and space-saving design
Robust and reliable performance
Key Technical Parameters
Manufacturer Part Number: IDB10S60C
Package: TO-263-3, DPak (2 Leads + Tab), TO-263AB
Voltage DC Reverse (Vr) (Max): 600 V
Current Average Rectified (Io): 10 A
Voltage Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Reverse Recovery Time (trr): 0 ns
Capacitance @ Vr, F: 480 pF @ 1 V, 1 MHz
Operating Temperature Junction: -55°C to 175°C
Quality and Safety Features
Robust and reliable design for high-stress applications
Compliance with relevant safety and regulatory standards
Compatibility
The IDB10S60C is compatible with a wide range of power electronics applications and systems.
Application Areas
Power supplies
Motor drives
Solar inverters
Industrial and medical equipment
Telecommunications and networking equipment
Product Lifecycle
The IDB10S60C is an active and widely available product from Infineon Technologies. Replacement or upgrade options may be available as technology evolves.
Key Reasons to Choose This Product
Excellent efficiency and energy savings
High-frequency switching capabilities
Robust and reliable performance
Wide operating temperature range
Compact and space-saving design
Compliance with relevant safety and regulatory standards
