Manufacturer Part Number
IDB06S60C
Manufacturer
Infineon Technologies
Introduction
High-performance silicon carbide (SiC) Schottky diode
Designed for high-frequency, high-efficiency power conversion applications
Product Features and Performance
Very low reverse recovery time of 0 ns
Extremely low forward voltage drop of 1.7 V at 6 A
Wide operating temperature range of -55°C to 175°C
Extremely low leakage current of 80 μA at 600 V
High switching speed with no recovery time > 500 mA
Compact and efficient package design
Product Advantages
Improved efficiency and reduced switching losses
Enables more compact and lightweight power conversion systems
Reliable operation in high-temperature environments
Key Technical Parameters
Voltage DC Reverse (Vr) (Max): 600 V
Current Average Rectified (Io): 6 A
Capacitance @ Vr, F: 280 pF @ 1 V, 1 MHz
Reverse Recovery Time (trr): 0 ns
Quality and Safety Features
Robust and reliable SiC technology
Complies with relevant safety and environmental standards
Compatibility
Suitable for a wide range of high-frequency, high-efficiency power conversion applications
Application Areas
Switch-mode power supplies (SMPS)
Motor drives
Renewable energy systems
Electric vehicle (EV) chargers
Industrial power electronics
Product Lifecycle
This product is actively supported and not nearing discontinuation.
Replacements and upgrades may be available in the future as technology advances.
Key Reasons to Choose This Product
Exceptional efficiency and performance due to SiC technology
Compact and efficient package design
Wide operating temperature range for reliable operation
Extremely low reverse recovery time for high-speed switching
Highly suitable for high-frequency, high-efficiency power conversion applications
