Manufacturer Part Number
IAUZ40N06S5N050ATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel power MOSFET in PowerTDFN package
Product Features and Performance
N-channel MOSFET with low on-resistance and fast switching speed
Optimized for high-frequency switching applications
Suitable for a wide range of power conversion and motor control applications
Product Advantages
Excellent figure of merit (RDS(on) QG)
Compact PowerTDFN package for high power density
Robust design with high ruggedness
Key Technical Parameters
Drain-Source Voltage (VDS): 60V
Maximum Gate-Source Voltage (VGS): ±20V
On-Resistance (RDS(on)): 5mΩ @ 20A, 10V
Continuous Drain Current (ID): 40A @ 25°C
Input Capacitance (Ciss): 2200pF @ 30V
Power Dissipation (Pd): 71W @ Tc
Quality and Safety Features
RoHS3 compliant
Qualified according to relevant AEC-Q101 standard
Compatibility
Suitable for a wide range of power conversion and motor control applications
Application Areas
Switching power supplies
Motor drives
Industrial automation
Electric vehicles
Product Lifecycle
Current product, no discontinuation planned
Replacements and upgrades available
Key Reasons to Choose This Product
Excellent figure of merit for high efficiency
Compact and thermally efficient PowerTDFN package
Robust design for reliable operation
Wide operating temperature range (-55°C to 175°C)
Suitable for high-frequency, high-power applications
IAUC60N04S6N031HATMA1Infineon TechnologiesIAUC60N04S6N031HATMA1