Manufacturer Part Number
IAUT240N08S5N019ATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel OptiMOS-5 MOSFET transistor
Optimized for high-power, high-frequency applications
Product Features and Performance
Very low on-resistance (RDS(on) = 1.9 mOhm)
High continuous drain current (ID = 240 A)
Wide operating temperature range (-55°C to 175°C)
Fast switching speed and low gate charge (Qg = 130 nC)
High input capacitance (Ciss = 9264 pF)
High power dissipation (230 W)
Product Advantages
Excellent efficiency and thermal performance
Ideal for high-power, high-frequency applications
Robust and reliable design
Key Technical Parameters
Drain-Source Voltage (VDS): 80 V
Gate-Source Voltage (VGS): ±20 V
Threshold Voltage (VGS(th)): 3.8 V
On-Resistance (RDS(on)): 1.9 mOhm
Quality and Safety Features
RoHS3 compliant
Suitable for safety-critical applications
Compatibility
Compatible with various high-power, high-frequency applications
Application Areas
Power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Current product, no discontinuation planned
Replacement and upgrade options available
Several Key Reasons to Choose This Product
Excellent efficiency and thermal performance
Robust and reliable design
Optimized for high-power, high-frequency applications
Wide operating temperature range
Fast switching speed and low gate charge
IAUC60N04S6N031HATMA1Infineon TechnologiesIAUC60N04S6N031HATMA1