CYD18S72V-133BBI - Infineon Technologies

Manufacturer Part Number

CYD18S72V-133BBI

Manufacturer

Infineon Technologies

Introduction

The CYD18S72V-133BBI is a high-speed, dual port, synchronous SRAM memory chip designed by Infineon Technologies. It is designed for advanced, high-performance computing and data storage systems.

Product Features and Performance

Volatile memory type

SRAM Dual Port, Synchronous technology

18Mbit memory size

Memory organization of 256K x 72

Parallel memory interface

High clock frequency of 133 MHz

Fast access time of 5 ns

Surface mount technology

Packaged in a 484-BGA

Product Advantages

High-speed data access and transfer capabilities

Suitable for parallel processing applications

Enhanced reliability and stability in computing operations

Efficient power consumption within the range of 3.135V ~ 3.465V

Key Technical Parameters

Memory Type: Volatile

Memory Format: SRAM

Clock Frequency: 133 MHz

Access Time: 5 ns

Voltage Supply: 3.135V ~ 3.465V

Operating Temperature: -40°C ~ 85°C (TA)

Quality and Safety Features

Operates within a wide temperature range, ensuring reliability under extreme conditions

Built with Infineon's renowned manufacturing quality and safety standards

Compatibility

Designed for use in systems requiring high-speed, parallel data access and storage

Application Areas

High-performance computing

Telecommunications equipment

Advanced data storage systems

Networking hardware

Product Lifecycle

Obsolete: This product is no longer being produced by Infineon Technologies and may have limited availability.

Users may need to seek replacements or upgrades for ongoing projects.

Several Key Reasons to Choose This Product

Exceptionally fast access time suitable for high-speed computing

High bandwidth capability facilitated by its synchronous dual port design

Robust performance assured by Infineon, a trusted name in semiconductor manufacturing

Versatile application range, from computing to telecommunications

Although obsolete, it remains an optimal choice for certain legacy systems requiring high-speed SRAM