Manufacturer Part Number
CYD18S18V18-200BBAXC
Manufacturer
Infineon Technologies
Introduction
The CYD18S18V18-200BBAXC is a high-performance, dual-port SRAM memory chip with a capacity of 18Mbit. It features a parallel memory interface and operates at a clock frequency of up to 200MHz, making it suitable for a variety of applications that require fast and reliable data storage.
Product Features and Performance
18Mbit of SRAM memory
Dual-port architecture for simultaneous read and write operations
Parallel memory interface
Clock frequency up to 200MHz
Fast access time of 3.3ns
Operates within a voltage range of 1.42V to 1.58V, or 1.7V to 1.9V
Operating temperature range of 0°C to 70°C
Product Advantages
Dual-port design enables concurrent read and write operations, improving system performance
High-speed operation and low access time suitable for demanding applications
Wide voltage and temperature ranges for increased flexibility and reliability
Key Reasons to Choose This Product
Exceptional performance and reliability for critical applications
Scalable design to meet the needs of diverse system requirements
Compatibility with a wide range of electronic devices and systems
Quality and Safety Features
Rigorous quality control and testing procedures to ensure reliability and durability
Compliance with industry standards and safety regulations
Compatibility
The CYD18S18V18-200BBAXC is designed to be compatible with a wide range of electronic devices and systems that require high-speed, dual-port SRAM memory.
Application Areas
Telecommunications equipment
Industrial automation and control systems
Networking and data communication devices
Embedded systems and IoT applications
Military and aerospace electronics
Product Lifecycle
The CYD18S18V18-200BBAXC is currently listed as an obsolete product. Customers are advised to contact our website's sales team for information on equivalent or alternative models that may be available.
CYD09S36V25-167BBCCypress Semiconductor