Manufacturer Part Number
CYD09S36V18-167BBXC
Manufacturer
Infineon Technologies
Introduction
The CYD09S36V18-167BBXC is a high-performance dual-port synchronous SRAM, designed for advanced data buffer applications requiring rapid read and write operations.
Product Features and Performance
Dual Port, Synchronous SRAM technology
High clock frequency of 167 MHz enabling quick data processing
Fast access time of 4 nanoseconds facilitates speedy retrieval and storage of data
Volatile memory type, ideal for applications where data storage is temporarily needed
Product Advantages
Increased data throughput and system speed due to synchronous operation
Ability to operate at a range of supply voltages (1.42V ~ 1.58V, 1.7V ~ 1.9V) providing flexibility in different power environments
Key Technical Parameters
Memory Size: 9Mbit
Memory Organization: 256K x 36
Memory Interface: Parallel
Voltage Supply: 1.42V ~ 1.58V, 1.7V ~ 1.9V
Clock Frequency: 167 MHz
Access Time: 4 ns
Quality and Safety Features
Built to operate reliably within a temperature range of 0°C to 70°C
Compatibility
Packaged in a 256-LBGA and compatible with surface mount technology, facilitating usage in varied circuit board designs
Application Areas
Ideal for systems requiring high-speed data access and temporary data storage, such as telecommunications, computing, and industrial applications
Product Lifecycle
Obsolete status with considerations for alternatives and upgrades within Infineon Technologies' portfolio
Several Key Reasons to Choose This Product
Exceptionally fast access time and high clock speeds enhance system performance dramatically
Supports a wide range of supply voltages, making it versatile for a variety of operating conditions
Designed for reliability in industrial temperature ranges which ensures dependable performance in diverse environments
Dual-port configuration enables complex operations involving simultaneous read and write capability
Infineon's strong product support which assists in smooth transition to alternatives or upgrades.