Manufacturer Part Number
CY7C2165KV18-550BZC
Manufacturer
Infineon Technologies
Introduction
High-speed 18Mbit Synchronous Quad Data Rate II+ SRAM
Product Features and Performance
Volatile Memory Type
Synchronous SRAM - QDR II+ Technology
18Mbit Memory Size
512K x 36 Memory Organization
Parallel Memory Interface
Supports Clock Frequencies up to 550 MHz
Product Advantages
High data bandwidth capabilities
Optimized for high-performance computing and networking applications
Support for concurrent read/write operations
Key Technical Parameters
Memory Format: SRAM
Write Cycle Time: Not specified
Supply Voltage: 1.7V to 1.9V
Operating Temperature Range: 0°C to 70°C
Clock Frequency: 550 MHz
Surface Mount Mounting Type
165-LBGA Package / Case
165-FBGA Supplier Device Package
Quality and Safety Features
Commercial grade temperature range
Designed for high reliability and stability
Compatibility
Compatible with standard SRAM interfaces
Suitable for use with high-speed digital signal processors and microcontrollers
Application Areas
Networking equipment
High-performance servers
Telecommunications infrastructure
High-speed data processing systems
Product Lifecycle
Product Status is Active
Not nearing discontinuation
Future upgrades or replacements may be available
Several Key Reasons to Choose This Product
Leading-edge SRAM - Synchronous QDR II+ Technology
High clock frequency support enhancing system performance
Robust 1.7V to 1.9V operating supply voltage range
Suitable for advanced telecommunications and computing applications
Strong track record of reliability from Infineon Technologies
Large memory organization catering to complex data storage needs
Compatible with a broad range of high-speed processing hardware
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