CY7C199D-10VXIT - Infineon Technologies

Manufacturer Part Number

CY7C199D-10VXIT

Manufacturer

Infineon Technologies

Introduction

High-performance SRAM designed for high-speed memory applications

Product Features and Performance

Volatile SRAM memory

Asynchronous operation

High-density 256Kbit storage

Organized as 32K x 8 for optimal data management

10 ns write cycle time for rapid data handling

10 ns access time enabling swift read operations

Parallel memory interface for straightforward integration

Product Advantages

Fast access and write times for high-speed applications

Robust temperature range for reliable operation in varied environments

Surface mount package for compact PCB design

Key Technical Parameters

Memory Size: 256Kbit

Memory Organization: 32K x 8

Access Time: 10 ns

Write Cycle Time: 10ns

Voltage Supply: 4.5V to 5.5V

Operating Temperature: -40°C to 85°C

Quality and Safety Features

Operates reliably across industrial temperature ranges

Designed in line with Infineon's quality and reliability standards

Compatibility

Compatible with various microcontrollers and digital systems that require parallel interface SRAM

Application Areas

Embedded systems

Telecommunication infrastructure

Automotive electronics

Industrial control systems

Gaming consoles

Networking hardware

Product Lifecycle

Active product status indicating current production

Available for new designs and existing systems

Several Key Reasons to Choose This Product

High-speed SRAM suitable for performance-intensive applications

Reliable performance over a wide range of operating conditions

Manufactured by Infineon, a trusted leader in semiconductor solutions

Suitable for a broad range of applications from consumer electronics to automotive systems

Technical and packaging compatibility ensuring ease of design and integration

Support and longevity backed by an established semiconductor manufacturer