Manufacturer Part Number
CY7C1414KV18-300BZXC
Manufacturer
Infineon Technologies
Introduction
High-speed SRAM designed for intensive parallel processing tasks
Product Features and Performance
Memory Type: Volatile
Memory Format: SRAM
Technology: Synchronous QDR II SRAM
Memory Size: 36Mbit
Memory Organization: 1M x 36
Memory Interface: Parallel
Clock Frequency: 300 MHz
Operating Temperature range: 0°C to 70°C
Mounting Type: Surface Mount
High-performance synchronous operation
Product Advantages
Optimized for high-speed data throughput
Stable and reliable data integrity
Ease of design with parallel interface
Fast clock frequency for responsive applications
Key Technical Parameters
Voltage Supply Range: 1.7V to 1.9V
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)
High clock frequency of 300 MHz
Large memory size of 36Mbit
Quality and Safety Features
Robust temperature range for reliable operation
Manufactured by a reputable company - Infineon Technologies
Compatibility
Compatible with a wide range of high-speed digital circuits and processors
Application Areas
Network routers and switches
High-speed data acquisition systems
Telecommunication infrastructure
High-performance computing applications
Product Lifecycle
Product Status: Last Time Buy
Discontinuation imminent; alternatives or replacements may be available
Several Key Reasons to Choose This Product
High-speed synchronous SRAM suitable for complex processing tasks
Large storage capacity with fast access times
Proven reliability and quality from Infineon Technologies
Product nearing end-of-life offers potential for cost-effective last-time purchase
Suitable for a wide range of industrial and high-performance applications
CY7C1414AV18-250BZC
CY7C1414KV18-250BZICypress Semiconductor