Manufacturer Part Number
CY7C1414KV18-250BZC
Manufacturer
Infineon Technologies
Introduction
High-speed SRAM memory designed for high-bandwidth applications.
Product Features and Performance
36Mbit memory size
1M x 36 memory organization
QDR II SRAM technology providing high-speed access
Synchronous memory with clock frequency of 250 MHz
Operates on a supply voltage of 1.7V to 1.9V
Surface mount 165-LBGA packaging for efficient PCB layout
Supports parallel memory interface for fast data transfer
Product Advantages
Robust speed for rapid data transmission
Efficient integration due to compact 165-FBGA package
Ideal for applications requiring high memory bandwidth
Key Technical Parameters
Memory Type: Volatile SRAM - Synchronous, QDR II
Memory Size: 36Mbit
Memory Organization: 1M x 36
Clock Frequency: 250 MHz
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature Range: 0°C to 70°C
Quality and Safety Features
Compliance with industry-standard quality and safety norms
Reliable performance across the specified temperature range
Compatibility
Designed for use with systems that support a parallel memory interface and 165-FBGA packaging
Application Areas
Telecommunication infrastructure
High-speed networking equipment
Servers and data centers
High-performance computing applications
Product Lifecycle
Last Time Buy status indicates the product is nearing discontinuation
Potential for replacements or upgrades should be checked with Infineon Technologies
Key Reasons to Choose This Product
High-speed synchronous interface operating at 250 MHz provides rapid data access
Large 36Mbit memory capacity suitable for complex applications
Stable and reliable operation within industrial temperature range
Part of the renowned CY7C1414 SRAM product family
Well-suited for advanced telecommunications and computing systems requiring fast memory access
CY7C1414BV18-200BZCInfineon TechnologiesIC SRAM 36MBIT PARALLEL 165FBGA