Manufacturer Part Number
CY7C1412KV18-250BZXC
Manufacturer
Infineon Technologies
Introduction
The CY7C1412KV18-250BZXC is a high-performance SRAM component designed using synchronous QDR II technology.
Product Features and Performance
Volatile Memory Type SRAM
Synchronous SRAM, QDR II Technology
Memory Size of 36Mbit
Organization: 2M x 18
Parallel Memory Interface
High Clock Frequency of 250 MHz
Product Advantages
Fast access and cycle times
Ideal for applications requiring high bandwidth and low latency
Key Technical Parameters
Supply Voltage: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C
Clock Frequency: 250 MHz
Memory Size: 36Mbit
Memory Organization: 2M x 18
Quality and Safety Features
Operates reliably within standard industrial temperature ranges
Designed for surface mount technology for secure attachment
Compatibility
Compatible with systems requiring a high-speed parallel interface
Application Areas
Networking
Telecommunications
Data processing
High-performance computing systems
Product Lifecycle
Status: Active
Not nearing discontinuation, with ongoing support and production
Several Key Reasons to Choose This Product
High data bandwidth capabilities
Low voltage operation minimizing overall power consumption
Consistent performance over a wide range of temperatures
Robust LGBA packaging for improved mechanical durability
Developed by Infineon Technologies, a leader in semiconductor solutions
CY7C1412AV18-250BZXCESCypress Semiconductor
CY7C1412AV18-250BZCRochester Electronics, LLCCY7C1412AV18 - 36 MBIT (2M X 18)