Manufacturer Part Number
CY7C1412BV18-200BZI
Manufacturer
Infineon Technologies
Introduction
The CY7C1412BV18-200BZI is a high-speed CMOS Synchronous SRAM organized as 2M x 18.
Product Features and Performance
Memory Type: Volatile SRAM Synchronous, QDR II
Memory Size: 36Mbit
Memory Organization: 2M x 18
Memory Interface: Parallel
Clock Frequency: 200 MHz
Operating Temperature Range: -40°C to 85°C
Voltage Supply: 1.7V to 1.9V
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Product Advantages
Fast access time and high data throughput suitable for high bandwidth applications
Support for wide temperature range makes it suitable for industrial applications
Key Technical Parameters
Memory Type: Volatile SRAM Synchronous, QDR II
Clock Frequency: 200 MHz
Memory Size: 36Mbit
Voltage Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 85°C (TA)
Package: 165-FBGA (15x17)
Quality and Safety Features
Manufactured by Infineon Technologies, ensuring high reliability and performance
RoHS compliant ensuring environmental friendliness
Compatibility
Memory interface: Parallel, compatible with a broad range of microcontrollers and processors with parallel interface capabilities
Application Areas
Telecommunications
Networking
High-speed computing systems
Industrial control
Product Lifecycle
Status: Obsolete
Note: Users should consider migrating to newer memory technologies or check for possible replacement products available from Infineon Technologies
Several Key Reasons to Choose This Product
High clock speed of 200 MHz allows rapid data processing
Broad operating temperature range suitable for extreme environments
Large memory organization catering to advanced computing needs
Reliable manufacturer ensuring product quality and longevity
Obsolescence notification provides a clear path for future upgrades or replacements
CY7C1412AV18-200BZXCRochester Electronics, LLCCY7C1412AV18 - 36 MBIT (2M X 18)
CY7C1412AV18-250BZXCESCypress Semiconductor