CY7C1412BV18-200BZI - Infineon Technologies

Manufacturer Part Number

CY7C1412BV18-200BZI

Manufacturer

Infineon Technologies

Introduction

The CY7C1412BV18-200BZI is a high-speed CMOS Synchronous SRAM organized as 2M x 18.

Product Features and Performance

Memory Type: Volatile SRAM Synchronous, QDR II

Memory Size: 36Mbit

Memory Organization: 2M x 18

Memory Interface: Parallel

Clock Frequency: 200 MHz

Operating Temperature Range: -40°C to 85°C

Voltage Supply: 1.7V to 1.9V

Mounting Type: Surface Mount

Package / Case: 165-LBGA

Product Advantages

Fast access time and high data throughput suitable for high bandwidth applications

Support for wide temperature range makes it suitable for industrial applications

Key Technical Parameters

Memory Type: Volatile SRAM Synchronous, QDR II

Clock Frequency: 200 MHz

Memory Size: 36Mbit

Voltage Supply: 1.7V ~ 1.9V

Operating Temperature: -40°C ~ 85°C (TA)

Package: 165-FBGA (15x17)

Quality and Safety Features

Manufactured by Infineon Technologies, ensuring high reliability and performance

RoHS compliant ensuring environmental friendliness

Compatibility

Memory interface: Parallel, compatible with a broad range of microcontrollers and processors with parallel interface capabilities

Application Areas

Telecommunications

Networking

High-speed computing systems

Industrial control

Product Lifecycle

Status: Obsolete

Note: Users should consider migrating to newer memory technologies or check for possible replacement products available from Infineon Technologies

Several Key Reasons to Choose This Product

High clock speed of 200 MHz allows rapid data processing

Broad operating temperature range suitable for extreme environments

Large memory organization catering to advanced computing needs

Reliable manufacturer ensuring product quality and longevity

Obsolescence notification provides a clear path for future upgrades or replacements