Manufacturer Part Number
CY7C1370DV25-167BZC
Manufacturer
Infineon Technologies
Introduction
The CY7C1370DV25-167BZC is a high-performance NoBL™ SRAM memory chip.
Product Features and Performance
Volatile Memory Type
Synchronous SRAM Technology
18Mbit Memory Size
512K x 36 Memory Organization
Parallel Memory Interface
167 MHz Clock Frequency
4 ns Access Time
375V to 2.625V Supply Voltage
Surface Mount Mounting Type
165-LBGA Package or Case
165-FBGA Supplier Device Package
Product Advantages
Optimized for high-speed data transfer
Quick access time suitable for performance-critical applications
Synchronous operation for improved efficiency
Simple parallel interface for ease of connectivity
Key Technical Parameters
Memory Type: Volatile SRAM, Synchronous, SDR
Memory Size: 18Mbit
Memory Organization: 512K x 36
Clock Frequency: 167 MHz
Access Time: 3.4 ns
Voltage Supply: 2.375V to 2.625V
Quality and Safety Features
Operates within the industrial temperature range of 0°C to 70°C
Designed to meet the reliability requirements for industrial applications
Compatibility
Compatible with systems and devices requiring high-speed SRAM with a parallel interface
Application Areas
High-performance computing systems
Telecommunication infrastructure
Networking hardware
Industrial controls
Product Lifecycle
Obsolete status
Replacements or upgrades may be available, user must verify
Key Reasons to Choose This Product
High clock frequency allows for rapid data processing
Broad temperature range accommodates various operating environments
Large memory organization caters to complex data storage needs
Fast access time enables quick data retrieval
Infineon's reputation for reliability adds confidence in product quality
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