Manufacturer Part Number
CY7C1370D-200BZI
Manufacturer
Infineon Technologies
Introduction
High-speed SRAM from Infineon's NoBL™ series designed for rapid parallel access.
Product Features and Performance
Volatile memory type
SRAM - Synchronous, SDR technology
High clock frequency of 200 MHz
Quick access time of 3 ns
Large memory size of 18Mbit
Organized as 512K x 36 bits
Compatible with parallel memory interface
Surface mount 165-LBGA package
Product Advantages
High-performance synchronous operation
Fast access time ideal for high-speed applications
Large data storage capacity for complex systems
Key Technical Parameters
Memory size: 18Mbit
Organization: 512K x 36
Clock frequency: 200 MHz
Access time: 3 ns
Supply voltage: 3.135V ~ 3.6V
Operating temperature range: -40°C ~ 85°C
Quality and Safety Features
Reliable performance across a broad temperature range
Compatibility
Parallel interface for easy integration with a variety of systems
Application Areas
Suitable for high-speed data buffering in networking and telecommunications equipment
Product Lifecycle
Obsolete status, should verify replacement or upgrade options
Several Key Reasons to Choose This Product
Quick data access enhances system performance
Large storage capacity accommodates significant data amounts
Fast clock speed facilitates rapid data transfer
Operates reliably under harsh temperature conditions
Infineon's legacy of high-quality semiconductor products
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