CY7C1041CV33-12ZXC - Infineon Technologies

Manufacturer Part Number

CY7C1041CV33-12ZXC

Manufacturer

Infineon Technologies

Introduction

This is a 4Mbit Asynchronous SRAM (Static Random Access Memory) integrated circuit from Infineon Technologies.

Product Features and Performance

4Mbit (256K x 16) memory capacity

Asynchronous SRAM technology

12ns access time

3V to 3.6V operating voltage

Parallel memory interface

12ns write cycle time for word and page access

Product Advantages

High-speed performance with 12ns access time

Wide operating voltage range of 3V to 3.6V

Parallel interface for easy integration

Compact 44-TSOP II package

Key Technical Parameters

Memory Size: 4Mbit

Memory Organization: 256K x 16

Memory Type: Volatile SRAM

Access Time: 12ns

Write Cycle Time: 12ns for word and page access

Operating Voltage: 3V to 3.6V

Operating Temperature: 0°C to 70°C

Quality and Safety Features

RoHS3 compliant

44-TSOP II package for surface mount applications

Compatibility

This SRAM IC is suitable for a wide range of applications that require high-speed, low-power asynchronous memory.

Application Areas

Embedded systems

Industrial automation

Consumer electronics

Telecommunications equipment

Product Lifecycle

The CY7C1041CV33-12ZXC is an active product, and Infineon Technologies continues to support and manufacture this device. Replacement or upgraded models may be available in the future.

Key Reasons to Choose This Product

High-speed performance with 12ns access time

Wide operating voltage range for versatile applications

Compact and easy-to-integrate 44-TSOP II package

RoHS3 compliance for environmentally-friendly use

Reliable and long-lasting Infineon Technologies quality