Manufacturer Part Number
CY7C1041CV33-12ZXC
Manufacturer
Infineon Technologies
Introduction
This is a 4Mbit Asynchronous SRAM (Static Random Access Memory) integrated circuit from Infineon Technologies.
Product Features and Performance
4Mbit (256K x 16) memory capacity
Asynchronous SRAM technology
12ns access time
3V to 3.6V operating voltage
Parallel memory interface
12ns write cycle time for word and page access
Product Advantages
High-speed performance with 12ns access time
Wide operating voltage range of 3V to 3.6V
Parallel interface for easy integration
Compact 44-TSOP II package
Key Technical Parameters
Memory Size: 4Mbit
Memory Organization: 256K x 16
Memory Type: Volatile SRAM
Access Time: 12ns
Write Cycle Time: 12ns for word and page access
Operating Voltage: 3V to 3.6V
Operating Temperature: 0°C to 70°C
Quality and Safety Features
RoHS3 compliant
44-TSOP II package for surface mount applications
Compatibility
This SRAM IC is suitable for a wide range of applications that require high-speed, low-power asynchronous memory.
Application Areas
Embedded systems
Industrial automation
Consumer electronics
Telecommunications equipment
Product Lifecycle
The CY7C1041CV33-12ZXC is an active product, and Infineon Technologies continues to support and manufacture this device. Replacement or upgraded models may be available in the future.
Key Reasons to Choose This Product
High-speed performance with 12ns access time
Wide operating voltage range for versatile applications
Compact and easy-to-integrate 44-TSOP II package
RoHS3 compliance for environmentally-friendly use
Reliable and long-lasting Infineon Technologies quality
CY7C1041CV33-10ZCCypress Semiconductor