CY7C1041CV33-12ZSXE - Infineon Technologies

Manufacturer Part Number

CY7C1041CV33-12ZSXE

Manufacturer

Infineon Technologies

Introduction

Asynchronous SRAM memory device designed for high-speed data retention

Product Features and Performance

4Mbit memory capacity

256K x 16 organization

12 ns access time for fast data retrieval

Surface mount 44-TSOP II package

Product Advantages

Optimized for volatile memory requirements

Robust temperature performance from -40°C to 125°C

Stable data access within the 3V to 3.6V supply range

Key Technical Parameters

Memory Type: Volatile SRAM

Write Cycle Time: 12ns

Voltage Supply: 3V ~ 3.6V

Operating Temperature Range: -40°C ~ 125°C

Quality and Safety Features

Compliant with industry quality standards for SRAM devices

Compatibility

Compatible with systems requiring parallel interface SRAM

Application Areas

Suitable for industrial, automotive, and communications systems

Product Lifecycle

Discontinued at Digi-Key, potential limited availability, and replacements may be considered

Several Key Reasons to Choose This Product

Rapid access time suitable for high-speed applications

High reliability in extreme temperatures

Ease of integration with existing parallel interface technologies

Direct replacement for equivalent SRAM devices that require minimal power