Manufacturer Part Number
CY7C1011DV33-10ZSXI
Manufacturer
Infineon Technologies
Introduction
High-speed 2Mbit SRAM memory
Product Features and Performance
Asynchronous SRAM technology
2Mbit storage capacity
128K x 16 memory organization
Parallel memory interface
10ns write cycle time
10ns access time
Product Advantages
High-speed data access
Reliable storage solution
Supports wide operating temperature range
Key Technical Parameters
Memory Type: Volatile SRAM
Memory Size: 2Mbit
Interface: Parallel
Supply Voltage: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Packaging: 44-TSOP II
Quality and Safety Features
Robust storage under a variety of conditions
Compatibility
Compatible with various microcontrollers and processors
Application Areas
Embedded systems
Communications equipment
Industrial applications
Product Lifecycle
Active product
Not near discontinuation
Several Key Reasons to Choose This Product
Fast access times for high-speed operations
Durable and reliable in extreme temperature conditions
Large storage capacity for complex applications
Compatibility with a wide range of electronic systems
Infineon's reputation for quality and reliability
Surface mount package for compact PCB designs
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