CY7C1011CV33-12ZSXE - Infineon Technologies

Manufacturer Part Number

CY7C1011CV33-12ZSXE

Manufacturer

Infineon Technologies

Introduction

The CY7C1011CV33-12ZSXE is a high-performance, high-density asynchronous SRAM (Static Random Access Memory) integrated circuit from Infineon Technologies.

Product Features and Performance

2Mbit memory capacity

12ns access time

12ns write cycle time

Parallel memory interface

128K x 16 memory organization

Operating temperature range of -40°C to 125°C

RoHS3 compliant

Product Advantages

High-speed performance with 12ns access and write cycle times

High density 2Mbit memory capacity

Wide operating temperature range suitable for industrial applications

RoHS3 compliance for environmental sustainability

Key Technical Parameters

Supply voltage: 3V to 3.6V

Memory technology: Asynchronous SRAM

Memory type: Volatile

Packaging: 44-TSOP II (0.400", 10.16mm width)

Mounting type: Surface mount

Quality and Safety Features

RoHS3 compliant for restricted hazardous substances

Tray packaging for protection during transportation and storage

Compatibility

Suitable for a wide range of electronic devices and systems requiring high-speed, high-density volatile memory

Application Areas

Industrial automation and control systems

Networking and telecommunications equipment

Embedded systems and IoT devices

Portable electronics and consumer devices

Product Lifecycle

The CY7C1011CV33-12ZSXE is an active, in-production part from Infineon Technologies. There are no immediate plans for discontinuation, and replacement or upgrade options may be available from the manufacturer.

Key Reasons to Choose This Product

High-performance asynchronous SRAM with 12ns access and write cycle times

Large 2Mbit memory capacity in a compact 44-TSOP II package

Wide operating temperature range of -40°C to 125°C for industrial applications

RoHS3 compliance for environmentally friendly design

Reliable tray packaging and surface mount compatibility