Manufacturer Part Number
CY62167DV30LL-55BVI
Manufacturer
Infineon Technologies
Introduction
High-speed 16Mbit Static Random-Access Memory (SRAM)
Product Features and Performance
Asynchronous SRAM
Low voltage data retention mode
High-speed access time: 55ns
Single 2.2V to 3.6V power supply
Ultra-low active and standby power consumption
Product Advantages
MoBL® (More Battery Life™) Technology for power optimization
High reliability and durability
Simple memory control due to asynchronous interface
Key Technical Parameters
Memory Size: 16Mbit
Memory Organization: 2M x 8, 1M x 16
Write Cycle Time: 55ns
Access Time: 55ns
Supply Voltage Range: 2.2V to 3.6V
Operating Temperature Range: -40°C to 85°C
Quality and Safety Features
Extended temperature performance for rugged applications
High data retention reliability
Compatibility
Compatible with various microprocessors and microcontrollers
Application Areas
Battery-powered electronics
Portable devices
Communications equipment
Industrial control systems
Product Lifecycle
Obsolete
Potential recommendation for replacements or upgrades available upon request
Key Reasons to Choose This Product
Capacity to work with a wide temperature range making it suitable for industrial applications
Low power consumption enhances battery life in portable devices
Designed for high-speed operations which is crucial for performance-centric applications
MoBL® technology is a boon for battery-powered applications requiring long battery life
The product's high reliability assures fewer failures in critical systems