Manufacturer Part Number
CY62157EV30LL-45ZSXIT
Manufacturer
Infineon Technologies
Introduction
Asynchronous SRAM memory IC
8Mbit memory capacity
Parallel interface
Product Features and Performance
45ns access time
2V to 3.6V operating voltage
-40°C to 85°C operating temperature range
45ns write cycle time
512K x 16 memory organization
SRAM technology
Product Advantages
High-performance asynchronous SRAM
Wide operating voltage and temperature range
Compact 44-TSOP II package
RoHS3 compliant
Key Technical Parameters
Memory Capacity: 8Mbit
Memory Type: Volatile SRAM
Memory Interface: Parallel
Access Time: 45ns
Write Cycle Time: 45ns
Supply Voltage: 2.2V to 3.6V
Quality and Safety Features
RoHS3 compliant
Surface mount package
Compatibility
Suitable for a variety of embedded systems and applications requiring asynchronous SRAM
Application Areas
Industrial control systems
Telecommunications equipment
Medical devices
Consumer electronics
Product Lifecycle
Active product, not nearing discontinuation
Replacement and upgrade options available from Infineon
Key Reasons to Choose This Product
High-performance asynchronous SRAM with fast access and write times
Wide operating voltage and temperature range for versatile applications
Compact surface mount package
RoHS3 compliance for environmental sustainability
Reliable and well-supported product from Infineon Technologies
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