CY62157EV30LL-45BVXIT - Infineon Technologies

Manufacturer Part Number

CY62157EV30LL-45BVXIT

Manufacturer

Infineon Technologies

Introduction

This is a high-performance 8Mbit SRAM (Static Random Access Memory) integrated circuit from Infineon Technologies.

Product Features and Performance

Asynchronous SRAM with parallel interface

Memory size of 8Mbit (512K x 16)

45ns access time

45ns write cycle time (word, page)

Operating voltage range of 2.2V to 3.6V

Wide operating temperature range of -40°C to 85°C

Product Advantages

Reliable and stable performance

Low power consumption

Wide temperature range for diverse applications

Parallel interface for easy integration

Key Technical Parameters

Memory Type: Volatile SRAM

Memory Organization: 512K x 16

Access Time: 45ns

Write Cycle Time: 45ns (word, page)

Supply Voltage: 2.2V to 3.6V

Operating Temperature: -40°C to 85°C

Quality and Safety Features

RoHS3 compliant

48-VFBGA (6x8) package for surface mount

Compatibility

This SRAM IC is compatible with a wide range of electronic systems and devices that require high-speed, low-power memory.

Application Areas

Embedded systems

Industrial automation

Telecommunications equipment

Consumer electronics

Military and aerospace applications

Product Lifecycle

This SRAM product is currently in active production and is not nearing discontinuation. Replacement or upgrade options are available from Infineon Technologies.

Key Reasons to Choose This Product

Reliable and stable performance with 45ns access time and 45ns write cycle time.

Wide operating voltage range of 2.2V to 3.6V and temperature range of -40°C to 85°C, making it suitable for diverse applications.

Compact 48-VFBGA (6x8) package with surface mount design for easy integration.

RoHS3 compliance for environmentally friendly use.

Availability of replacement and upgrade options from the manufacturer, ensuring long-term support.