Manufacturer Part Number
CY62148DV30LL-55SXI
Manufacturer
Infineon Technologies
Introduction
High-speed 4Mbit SRAM Memory Chip
Product Features and Performance
4Mbit memory capacity
Asynchronous SRAM technology
Parallel memory interface
512K x 8 memory organization
Access time of 55ns
Write cycle time of 55ns
Product Advantages
Fast access and write times
Compatible with a wide range of operating voltages (2.2V to 3.6V)
Suitable for operations across a broad temperature range (-40°C to 85°C)
Key Technical Parameters
Memory Type: Volatile
Memory Size: 4Mbit
Memory Organization: 512K x 8
Write Cycle Time: 55ns
Access Time: 55ns
Supply Voltage: 2.2V to 3.6V
Operating Temperature: -40°C to 85°C
Quality and Safety Features
Operational over wide temperature range
Robust surface mount 32-SOIC package
Compatibility
General parallel interface for broad device compatibility
Application Areas
High-performance computing
Communications equipment
Industrial control systems
Product Lifecycle
Obsolete
Replacements or upgrades may be available
Several Key Reasons to Choose This Product
Speed optimizes high-performance systems
Reliability in extreme temperature conditions
Adaptability to various voltages for flexible power design
Infineon's reputation for quality and robustness in memory technology
Large capacity for data-intensive applications