Manufacturer Part Number
CY62148BNLL-70SXI
Manufacturer
Infineon Technologies
Introduction
This is a high-performance, low-power 4Mbit SRAM (Static Random Access Memory) integrated circuit from Infineon Technologies.
Product Features and Performance
4Mbit of high-speed SRAM storage
Fast 70ns access time
Parallel memory interface
512K x 8 memory organization
5V to 5.5V operating voltage range
Wide -40°C to 85°C operating temperature range
Low standby and active power consumption
Excellent data retention capabilities
Product Advantages
High-density SRAM storage in a compact SOIC package
Fast access and write speeds for demanding applications
Wide voltage and temperature operating ranges
Low power consumption for battery-powered or energy-efficient designs
Reliable performance and data retention
Key Technical Parameters
Memory Size: 4Mbit
Memory Type: Volatile SRAM
Access Time: 70ns
Memory Organization: 512K x 8
Supply Voltage: 4.5V to 5.5V
Operating Temperature: -40°C to 85°C
Quality and Safety Features
RoHS3 compliant for environmental responsibility
32-SOIC package for reliable surface mount assembly
Rigorous testing and quality control by Infineon
Compatibility
This SRAM IC is compatible with a wide range of microcontrollers, processors, and other digital systems that require high-speed, high-density volatile memory.
Application Areas
Embedded systems
Industrial automation and control
Telecommunications equipment
Computer and networking devices
Consumer electronics
Product Lifecycle
The CY62148BNLL-70SXI is an active, in-production product from Infineon Technologies. Replacement or upgrade options may be available as technology evolves.
Key Reasons to Choose This Product
High-performance 4Mbit SRAM with fast 70ns access time
Wide operating voltage and temperature ranges for diverse applications
Low power consumption for energy-efficient designs
Reliable data retention and RoHS3 compliance
Compact 32-SOIC package for space-constrained designs
Broad compatibility with various digital systems and processors
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