CY62138FV30LL-45ZXIT - Infineon Technologies

Manufacturer Part Number

CY62138FV30LL-45ZXIT

Manufacturer

Infineon Technologies

Introduction

High-speed, low-power, and high-density SRAM memory integrated circuit

Product Features and Performance

2Mbit of asynchronous SRAM memory

45ns access time

Parallel memory interface

256K x 8 memory organization

45ns write cycle time for word and page

2V to 3.6V supply voltage range

Wide operating temperature range of -40°C to 85°C

Product Advantages

Excellent power efficiency

High-density and high-speed memory solution

Broad compatibility and versatility

Key Technical Parameters

Memory Size: 2Mbit

Memory Type: Volatile SRAM

Access Time: 45ns

Memory Interface: Parallel

Write Cycle Time: 45ns

Memory Organization: 256K x 8

Supply Voltage: 2.2V to 3.6V

Operating Temperature: -40°C to 85°C

Quality and Safety Features

RoHS3 compliant

32-TSOP I package

Compatibility

Suitable for a wide range of embedded systems and applications

Application Areas

Ideal for use in various electronic devices and systems that require high-speed, high-density, and low-power SRAM memory

Product Lifecycle

This product is actively supported and not nearing discontinuation

Replacement or upgrade options are available if needed

Several Key Reasons to Choose This Product

Excellent performance and power efficiency

High-density and high-speed memory solution

Broad compatibility and versatility

Wide operating temperature range

Reliable and RoHS3 compliant