Manufacturer Part Number
CY62146ESL-45ZSXI
Manufacturer
Infineon Technologies
Introduction
High performance 4Mbit SRAM with asynchronous interface
Product Features and Performance
Asynchronous SRAM technology
4Mbit memory size
256K x 16 organization
Parallel memory interface
45ns write cycle time
45ns access time
Multiple voltage supply options: 2.2V to 3.6V and 4.5V to 5.5V
Product Advantages
Optimized for high speed and low power applications
Wide operating temperature range from -40°C to 85°C
Suitable for battery-powered devices due to low power consumption
Key Technical Parameters
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V, 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Write Cycle Time - Word, Page: 45ns
Quality and Safety Features
Designed for high-reliability applications
Ensures data integrity and product longevity
Compatibility
Compatible with a wide range of microprocessors and DSPs
Versatile TSOP package for ease of PCB design
Application Areas
Telecommunications
Industrial controls
Automotive systems
Medical electronics
Networking hardware
Product Lifecycle
Currently Active with ongoing support and production
Several Key Reasons to Choose This Product
High density memory solution for complex applications
Robust performance in extreme conditions
Versatile compatibility across different voltage ranges
Ease of integration with various hardware platforms
Future-proof design with support and production from Infineon Technologies