Manufacturer Part Number
CY62137FV30LL-45BVXI
Manufacturer
Infineon Technologies
Introduction
The CY62137FV30LL-45BVXI is a high-performance SRAM device from Infineon Technologies, featuring 2Mbit memory size and designed for high-speed data storage and retrieval.
Product Features and Performance
Asynchronous SRAM with 2Mbit storage
Organized as 128K x 16 for efficient data management
Fast access time of 45 ns
Write cycle time of 45 ns for quick data handling
Operates over a voltage range of 2.2V to 3.6V
Compatible with parallel memory interface for easy integration
Product Advantages
High-speed operation enhances system performance
Flexible voltage range supports varied system requirements
Compact 48-VFBGA packaging saves PCB space
Designed for low-power consumption to extend battery life in portable applications
Key Technical Parameters
Memory Type: Volatile, SRAM Asynchronous
Memory Size: 2Mbit
Access Time: 45 ns
Write Cycle Time Word, Page: 45 ns
Voltage Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Quality and Safety Features
Manufactured by Infineon Technologies, ensuring high reliability and performance
Packaged in a 48-VFBGA package for robustness
Compatibility
Parallel memory interface for broad system compatibility
Suitable for systems requiring fast memory access within the voltage range of 2.2V to 3.6V
Application Areas
Ideal for high-performance computing, embedded systems, and communication devices
Useful in portable devices due to low power consumption
Product Lifecycle
Currently marked as Active, indicating ongoing production and availability
Not nearing discontinuation, with Infineon often providing support for product transitions
Several Key Reasons to Choose This Product
Infineon's reputation for high-quality and reliable memory products
High-speed access and write times improve system responsiveness
Low power consumption suitable for battery-powered devices
Versatile voltage range and compatibility with various systems
Compact package design enabling efficient use of PCB space