Manufacturer Part Number
CY62137FV18LL-55BVXI
Manufacturer
Infineon Technologies
Introduction
CY62137FV18LL-55BVXI is a high-speed, low-power 2Mbit SRAM device from Infineon's MoBL® series.
Product Features and Performance
Volatile memory technology
SRAM - Asynchronous memory format
2Mbit memory size
128K x 16 memory organization
Parallel memory interface
55ns write cycle time for word/page
55ns access time
65V to 2.25V supply voltage range
Product Advantages
Low power consumption
High-speed access time
Robust operating temperature range
Key Technical Parameters
Memory type: Volatile
Memory format: SRAM
Memory size: 2Mbit
Memory organization: 128K x 16
Write cycle time: 55ns
Access time: 55ns
Voltage supply: 1.65V to 2.25V
Operating temperature: -40°C to +85°C
Quality and Safety Features
Reliable performance across a wide temperature range
Compatibility
Surface mount technology
Compatible with 48-VFBGA package system designs
Application Areas
Embedded systems
Automotive electronics
Medical devices
Industrial controls
Telecommunication infrastructure
Product Lifecycle
Product status: Active
Not nearing discontinuation
Several Key Reasons to Choose This Product
High-speed SRAM suitable for performance-intensive applications
Low-power operation for battery-sensitive designs
Consistent performance in extreme conditions
Extensive support and longevity due to active product status with Infineon
Broad compatibility in various electronic systems due to standard VFBGA packaging