CY14B104K-ZS45XI - Infineon Technologies

Manufacturer Part Number

CY14B104K-ZS45XI

Manufacturer

Infineon Technologies

Introduction

High-performance, high-density non-volatile SRAM (NVSRAM) solution

Product Features and Performance

4Mbit of non-volatile SRAM memory

Parallel interface

45ns access time

45ns write cycle time

Wide operating voltage range of 2.7V to 3.6V

Wide operating temperature range of -40°C to 85°C

Product Advantages

Seamless transition between volatile and non-volatile states

Reliable data retention even during power loss

Endurance of up to 1 million write cycles

High-speed performance

Key Technical Parameters

Memory size: 4Mbit

Memory organization: 512K x 8

Memory type: Non-volatile SRAM (NVSRAM)

Interface: Parallel

Access time: 45ns

Write cycle time: 45ns

Operating voltage: 2.7V to 3.6V

Operating temperature: -40°C to 85°C

Quality and Safety Features

RoHS3 compliant

44-TSOP II package

Compatibility

Surface mount package

Suitable for a wide range of embedded applications

Application Areas

Industrial control systems

Telecommunications equipment

Automotive electronics

Medical devices

Product Lifecycle

Currently in production

No known plans for discontinuation

Replacement or upgrade options available from Infineon Technologies

Key Reasons to Choose This Product

High-performance non-volatile memory solution

Reliable data retention during power loss

Endurance for long-term operation

Wide operating voltage and temperature ranges

Compact surface mount package

RoHS3 compliance for environmental safety