Manufacturer Part Number
BTS282ZE3230
Manufacturer
Infineon Technologies
Introduction
The BTS282ZE3230 is a high-performance MOSFET transistor from Infineon Technologies, designed for a wide range of power electronics applications.
Product Features and Performance
N-channel MOSFET with a drain-to-source voltage of 49V
Extremely low on-resistance of 6.5mΩ at 36A and 10V
High continuous drain current of 80A at 25°C
Wide operating temperature range of -40°C to 175°C
Low input capacitance of 4800pF at 25V
High power dissipation of 300W at Tc
Product Advantages
Excellent efficiency and low power loss
Robust design for reliable operation
Suitable for high-current, high-power applications
Stable performance across a wide temperature range
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 49V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 6.5mΩ @ 36A, 10V
Continuous Drain Current (Id): 80A @ 25°C
Input Capacitance (Ciss): 4800pF @ 25V
Power Dissipation (Pd): 300W @ Tc
Quality and Safety Features
Compliant with RoHS requirements
Robust and reliable design for long-term use
Suitable for high-temperature and high-current applications
Compatibility
Suitable for a wide range of power electronics applications, including industrial, automotive, and consumer electronics
Application Areas
Motor control
Power supplies
Inverters
Switching regulators
Industrial automation
Automotive electronics
Product Lifecycle
The BTS282ZE3230 is an active and widely available product from Infineon Technologies.
Replacement or upgrade options may be available as technology evolves.
Key Reasons to Choose This Product
Excellent efficiency and low power loss
Robust and reliable design for long-term use
Suitable for high-current, high-power applications
Stable performance across a wide temperature range
Widely compatible with various power electronics applications