BTS282ZE3180A - Infineon Technologies

Manufacturer Part Number

BTS282ZE3180A

Manufacturer

Infineon Technologies

Introduction

The BTS282ZE3180A is a high-power, N-channel MOSFET transistor from Infineon Technologies.

Product Features and Performance

High-power handling capability with a continuous drain current rating of 80A at 25°C

Low on-state resistance (RDS(on)) of 6.5mΩ at 36A, 10V

Wide operating temperature range of -40°C to 175°C

High input capacitance (Ciss) of 4800pF at 25V

High power dissipation of 300W at 25°C

Product Advantages

Excellent thermal performance and efficiency

Suitable for high-current, high-power applications

Robust and reliable design

Key Technical Parameters

Drain to Source Voltage (VDS): 49V

Gate to Source Voltage (VGS): ±20V

Threshold Voltage (VGS(th)): 2V at 240A

Drive Voltage (VGS): 4.5V (max RDS(on)), 10V (min RDS(on))

Gate Charge (Qg): 232nC at 10V

Quality and Safety Features

Compliant with RoHS requirements

Robust and reliable design for high-stress applications

Compatibility

Suitable for a wide range of high-power, high-current applications

Application Areas

Suitable for use in power supplies, motor drives, and other high-power electronic systems

Product Lifecycle

This product is currently available and in production

Replacement or upgrade options may be available in the future

Several Key Reasons to Choose This Product

High-power handling capability and efficiency

Low on-state resistance for improved performance

Wide operating temperature range

Robust and reliable design for demanding applications

Suitable for a variety of high-power electronic systems