Manufacturer Part Number
BSS209PW
Manufacturer
Infineon Technologies
Introduction
The BSS209PW is a P-channel MOSFET transistor from the OptiMOS series by Infineon Technologies, designed for a wide range of power management applications.
Product Features and Performance
P-channel MOSFET with 20V drain-to-source voltage rating
Low on-resistance of 550 mΩ at 580 mA, 4.5V gate voltage
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 89.9 pF at 15V
Maximum power dissipation of 520 mW
Product Advantages
Optimized for efficiency and performance in power management circuits
Compact SC-70, SOT-323 surface mount package
Tape and reel packaging for automated assembly
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 20V
Gate-to-Source Voltage (Vgs): ±12V
On-Resistance (Rds(on)): 550 mΩ @ 580 mA, 4.5V
Continuous Drain Current (Id): 580 mA at 25°C
Input Capacitance (Ciss): 89.9 pF @ 15V
Power Dissipation (Pd): 520 mW
Quality and Safety Features
Manufactured using Infineon's reliable MOSFET technology
Meets relevant industry standards for safety and reliability
Compatibility
The BSS209PW is compatible with a wide range of power management and control applications, including:
DC-DC converters
Motor drivers
Power switches
Battery management systems
Application Areas
Portable electronics
Household appliances
Industrial automation
Automotive electronics
Product Lifecycle
The BSS209PW is an active and widely used product in Infineon's portfolio. There are no plans for discontinuation, and suitable replacement or upgrade options are available if needed.
Key Reasons to Choose the BSS209PW
Excellent efficiency and performance in power management applications
Compact surface mount packaging for space-constrained designs
Wide operating temperature range for reliable operation in diverse environments
Proven Infineon MOSFET technology for quality and reliability
Compatibility with a broad range of power management and control applications
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