Manufacturer Part Number
BSS205NH6327XTSA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor with low on-resistance and optimized for efficiency in power conversion applications.
Product Features and Performance
Very low on-resistance (50 mΩ max. at 2.5 A, 4.5 V)
Fast switching speed
Low gate charge (3.2 nC max. at 4.5 V)
Suitable for high-frequency, high-efficiency power conversion applications
Extended operating temperature range (-55°C to 150°C)
Product Advantages
Optimized for high efficiency in power conversion
Compact surface mount package
Robust design for reliable operation
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 20 V
Gate-to-Source Voltage (Vgs): ±12 V
Continuous Drain Current (Id): 2.5 A
Input Capacitance (Ciss): 419 pF max. at 10 V
Power Dissipation (Pd): 500 mW
Quality and Safety Features
RoHS3 compliant
Qualified to industrial and automotive standards
Compatibility
Compatible with a wide range of power conversion and control applications.
Application Areas
Switching power supplies
DC-DC converters
Motor drives
Battery management systems
General power management
Product Lifecycle
Currently in production. No known plans for discontinuation. Replacements and upgrades may be available as technology advances.
Several Key Reasons to Choose This Product
Excellent efficiency performance through low on-resistance and fast switching
Compact surface mount package for space-constrained designs
Robust design for reliable operation in harsh environments
Broad compatibility across a range of power conversion applications
BSS214NMSV