Manufacturer Part Number
BSS169H6327XTSA1
Manufacturer
Infineon Technologies
Introduction
The BSS169H6327XTSA1 is a N-Channel Depletion Mode MOSFET transistor from Infineon Technologies.
Product Features and Performance
Drain to Source Voltage (Vdss) of 100V
Maximum Gate-Source Voltage (Vgs) of ±20V
On-Resistance (Rds(on)) of 6Ω at 170mA, 10V
Continuous Drain Current (Id) of 170mA at 25°C
Input Capacitance (Ciss) of 68pF at 25V
Power Dissipation (Pd) of 360mW at 25°C
Operating Temperature Range of -55°C to 150°C
Product Advantages
Depletion Mode operation
Low on-resistance
High voltage rating
Small package size (PG-SOT23)
Tape and reel packaging for automated assembly
Key Technical Parameters
MOSFET Technology
N-Channel
Depletion Mode
Vds: 100V, Vgs: ±20V
Rds(on): 6Ω @ 170mA, 10V
Id: 170mA @ 25°C
Ciss: 68pF @ 25V
Pd: 360mW @ 25°C
Quality and Safety Features
RoHS3 Compliant
Suitable for surface mount applications
Compatibility
Compatible with a wide range of electronic circuits and systems
Application Areas
Suitable for various power management and control applications
Product Lifecycle
Currently in active production
Replacement or upgrade options may be available
Key Reasons to Choose This Product
High voltage rating for various power applications
Low on-resistance for efficient power handling
Small package size and surface mount compatibility for compact designs
Depletion mode operation for specific circuit requirements
Reliable performance within the wide operating temperature range
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