Manufacturer Part Number
BSS159NH6327XTSA2
Manufacturer
Infineon Technologies
Introduction
This is a single N-channel MOSFET transistor from the SIPMOS series, suitable for general-purpose applications.
Product Features and Performance
Depletion mode MOSFET
Drain-source voltage up to 60V
Maximum gate-source voltage of ±20V
On-resistance as low as 3.5Ω at 160mA, 10V
Continuous drain current up to 230mA at 25°C
Input capacitance of 39pF at 25V
Power dissipation up to 360mW
Product Advantages
Low on-resistance for efficient power switching
High voltage handling capability
Wide operating temperature range of -55°C to 150°C
Compact surface mount package
Key Technical Parameters
Drain-source voltage (Vdss): 60V
Gate-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 3.5Ω @ 160mA, 10V
Drain current (Id): 230mA @ 25°C
Input capacitance (Ciss): 39pF @ 25V
Gate charge (Qg): 1.4nC @ 5V
Quality and Safety Features
RoHS3 compliant
Suitable for reflow soldering in Tape and Reel packaging
Compatibility
Compatible with standard MOSFET driver circuits
Application Areas
General-purpose power switching
Amplifier circuits
Motor control
Power supply regulation
Product Lifecycle
Currently in production
Replacement or upgrade options available from Infineon
Key Reasons to Choose This Product
Excellent power handling and efficiency due to low on-resistance
Wide voltage and temperature operating range
Compact surface mount package for space-constrained designs
RoHS compliance for environmentally friendly applications
Availability in standard Tape and Reel packaging for automated assembly
BSS159N L6327INF