Manufacturer Part Number
BSP615S2L
Manufacturer
Infineon Technologies
Introduction
Discrete semiconductor product
Single N-channel MOSFET transistor
Product Features and Performance
55V drain-to-source voltage (Vdss)
±20V gate-to-source voltage (Vgs)
90mΩ maximum on-resistance (Rds(on)) at 1.4A, 10V
8A maximum continuous drain current (Id) at 25°C
330pF maximum input capacitance (Ciss) at 25V
8W maximum power dissipation at 25°C
N-channel MOSFET technology
2V maximum gate threshold voltage (Vgs(th)) at 12A
Product Advantages
Low on-resistance for efficient power conversion
High voltage capability for a wide range of applications
Surface mount packaging for compact design
Key Technical Parameters
Drain-to-source voltage (Vdss): 55V
Gate-to-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 90mΩ @ 1.4A, 10V
Continuous drain current (Id): 2.8A @ 25°C
Input capacitance (Ciss): 330pF @ 25V
Power dissipation (max): 1.8W @ 25°C
Gate threshold voltage (Vgs(th)): 2V @ 12A
Quality and Safety Features
RoHS non-compliant
Compatibility
TO-261-4, TO-261AA package
Application Areas
Power conversion circuits
Motor control
Lighting applications
Automotive electronics
Product Lifecycle
Currently available
No information on discontinuation or replacement
Key Reasons to Choose This Product
Efficient power conversion with low on-resistance
High voltage capability for versatile applications
Compact surface mount package for space-constrained designs
Established Infineon Technologies quality and reliability
BSP613Freescale / NXP Semiconductors
BSP613P E6327INFINE0N