BSP615S2L - Infineon Technologies

Manufacturer Part Number

BSP615S2L

Manufacturer

Infineon Technologies

Introduction

Discrete semiconductor product

Single N-channel MOSFET transistor

Product Features and Performance

55V drain-to-source voltage (Vdss)

±20V gate-to-source voltage (Vgs)

90mΩ maximum on-resistance (Rds(on)) at 1.4A, 10V

8A maximum continuous drain current (Id) at 25°C

330pF maximum input capacitance (Ciss) at 25V

8W maximum power dissipation at 25°C

N-channel MOSFET technology

2V maximum gate threshold voltage (Vgs(th)) at 12A

Product Advantages

Low on-resistance for efficient power conversion

High voltage capability for a wide range of applications

Surface mount packaging for compact design

Key Technical Parameters

Drain-to-source voltage (Vdss): 55V

Gate-to-source voltage (Vgs): ±20V

On-resistance (Rds(on)): 90mΩ @ 1.4A, 10V

Continuous drain current (Id): 2.8A @ 25°C

Input capacitance (Ciss): 330pF @ 25V

Power dissipation (max): 1.8W @ 25°C

Gate threshold voltage (Vgs(th)): 2V @ 12A

Quality and Safety Features

RoHS non-compliant

Compatibility

TO-261-4, TO-261AA package

Application Areas

Power conversion circuits

Motor control

Lighting applications

Automotive electronics

Product Lifecycle

Currently available

No information on discontinuation or replacement

Key Reasons to Choose This Product

Efficient power conversion with low on-resistance

High voltage capability for versatile applications

Compact surface mount package for space-constrained designs

Established Infineon Technologies quality and reliability