Manufacturer Part Number
BSP613PH6327XTSA1
Manufacturer
Infineon Technologies
Introduction
The BSP613PH6327XTSA1 is a P-channel MOSFET transistor from Infineon Technologies.
Product Features and Performance
P-channel MOSFET
60V Drain-Source Voltage
±20V Gate-Source Voltage
130mΩ On-Resistance at 2.9A, 10V
9A Continuous Drain Current at 25°C
875pF Input Capacitance at 25V
8W Power Dissipation at 25°C
-55°C to 150°C Operating Temperature Range
Product Advantages
Low on-resistance for efficient power switching
High voltage and current handling capability
Suitable for a wide range of operating temperatures
Small surface mount package for compact designs
Key Technical Parameters
Drain-Source Voltage (Vdss): 60V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 130mΩ @ 2.9A, 10V
Continuous Drain Current (Id): 2.9A @ 25°C
Input Capacitance (Ciss): 875pF @ 25V
Power Dissipation (Pd): 1.8W @ 25°C
Quality and Safety Features
ROHS3 Compliant
PG-SOT223-4 Package
Compatibility
Compatible with a wide range of electronic circuits and systems
Application Areas
Power switching and control circuits
Motor drives
Automotive electronics
Industrial controls
Consumer electronics
Product Lifecycle
Currently available
No plans for discontinuation at this time
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent performance characteristics, including low on-resistance, high voltage and current handling, and wide operating temperature range
Compact surface mount package for space-efficient designs
RoHS3 compliance for environmental friendliness
Proven reliability and quality from Infineon Technologies
Compatibility with a wide range of applications and circuits
BSP613P E6327INFINE0N
BSP613Freescale / NXP Semiconductors