Manufacturer Part Number
BSP373L6327
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor with low on-resistance and high power density.
Product Features and Performance
Optimized for power switching and control applications
Extremely low on-resistance for high efficiency
High power density with compact TO-261 package
Excellent thermal performance and reliability
Product Advantages
Efficient power conversion and control
Compact and space-saving design
Reliable and durable operation
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 300mΩ @ 1.7A, 10V
Continuous Drain Current (ID): 1.7A @ 25°C
Input Capacitance (Ciss): 550pF @ 25V
Power Dissipation (Pd): 1.8W @ 25°C
Quality and Safety Features
MOSFET technology with robust construction
RoHS3 compliant for environmental compliance
Operating temperature range: -55°C to 150°C
Compatibility
Suitable for a wide range of power switching and control applications
Application Areas
Power supplies
Motor drives
Inverters
Switching regulators
General power electronics
Product Lifecycle
Currently in active production
No known discontinuation or replacement plans
Key Reasons to Choose This Product
Excellent efficiency and power density
Reliable and durable performance
Compact and space-saving design
Suitable for a variety of power electronics applications