Manufacturer Part Number
BSP372NH6327XTSA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET with low RDS(on) and high current capability
Product Features and Performance
Designed for high-efficiency and high-power density applications
Optimized for fast switching
Suitable for a wide range of applications including power supplies, motor drives, and switching regulators
Product Advantages
Excellent energy efficiency due to low RDS(on)
Fast switching capability for high-frequency operation
Compact and space-saving TO-261-4 package
Key Technical Parameters
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 230mOhm @ 1.8A, 10V
Current Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 329 pF @ 25 V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 218A
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature operation (-55°C to 150°C)
Compatibility
Suitable for a wide range of power electronics applications, including power supplies, motor drives, and switching regulators
Application Areas
Power supplies
Motor drives
Switching regulators
Industrial electronics
Consumer electronics
Product Lifecycle
This product is currently in production and available for purchase
Replacements or upgrades may become available in the future as technology evolves
Key Reasons to Choose This Product
Excellent energy efficiency due to low RDS(on)
Fast switching capability for high-frequency operation
Compact and space-saving TO-261-4 package
Suitable for a wide range of power electronics applications
Reliable performance in high-temperature environments
RoHS3 compliance for environmental responsibility
BSP373 MOSFreescale / NXP Semiconductors
BSP373N H6327INFINEONINEON