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Home Products Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single~~BSP322PH6327XTSA1~~

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BSP322PH6327XTSA1 - Infineon Technologies

Name: Infineon Technologies BSP322PH6327XTSA1
Brand: Infineon Technologies
SKU: BSP322PH6327XTSA1
Availability: InStock
Rating: 5 (7 reviews)

Manufacturer Part Number: BSP322PH6327XTSA1

Manufacturer: Infineon Technologies

Allelco Part Number: 32D-BSP322PH6327XTSA1

ECAD Model

Parts Description: MOSFET P-CH 100V 1A SOT223-4

Package: TO-261-4, TO-261AA

Data sheet: ~~BSP322PH6327XTSA1.pdf~~

RoHs Status: ROHS3 Compliant

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Specifications

BSP322PH6327XTSA1 Tech Specifications
Infineon Technologies - BSP322PH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies - BSP322PH6327XTSA1

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Vgs(th) (Max) @ Id	1V @ 380µA
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
Supplier Device Package	PG-SOT223-4
Series	SIPMOS®
Rds On (Max) @ Id, Vgs	800mOhm @ 1A, 10V
Power Dissipation (Max)	1.8W (Ta)
Package / Case	TO-261-4, TO-261AA
Package	Tape & Reel (TR)

Product Attribute	Attribute Value
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Input Capacitance (Ciss) (Max) @ Vds	372 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	16.5 nC @ 10 V
FET Type	P-Channel
FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	1A (Tc)
Base Product Number	BSP322

Environmental & Export Classifications

ATTRIBUTE	DESCRIPTION
RoHs Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS

Parts Introduction

Manufacturer Part Number

BSP322PH6327XTSA1

Manufacturer

Infineon Technologies

Introduction

Discrete Semiconductor Product

Single Transistor FET, MOSFET

Product Features and Performance

P-Channel MOSFET

Voltage Rating: 100V

Current Rating: 1A

On-Resistance: 800mΩ

Input Capacitance: 372pF

Power Dissipation: 1.8W

Product Advantages

Wide temperature range (-55°C to 150°C)

Low on-resistance

Suitable for high-voltage, high-power applications

Key Technical Parameters

Drain-Source Voltage (Vdss): 100V

Gate-Source Voltage (Vgs): ±20V

Continuous Drain Current (Id): 1A

On-Resistance (Rds(on)): 800mΩ

Input Capacitance (Ciss): 372pF

Quality and Safety Features

RoHS3 Compliant

ESD Protection

Compatibility

TO-261-4, TO-261AA package

Surface Mount Mounting

Application Areas

Switching power supplies

Motor drives

Automotive electronics

Industrial automation

Product Lifecycle

Current product, no discontinuation plans

Key Reasons to Choose

Wide operating temperature range

Low on-resistance for high efficiency

Suitable for high-power, high-voltage applications

Reliable performance in demanding environments

Parts with Similar Specifications

The three parts on the right have similar specifications to Infineon Technologies BSP322PH6327XTSA1

Product Attribute
Part Number	BSP322PH6327XTSA1	BSP324L6327	BSP322PL6327	BSP321PH6327XTSA1
Manufacturer	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	1A (Tc)	170mA (Ta)	1A (Tc)	980mA (Tc)
Drain to Source Voltage (Vdss)	100 V	400 V	100 V	100 V
Package	Tape & Reel (TR)	Bulk	Bulk	Tape & Reel (TR)
Vgs(th) (Max) @ Id	1V @ 380µA	2.3V @ 94µA	1V @ 380µA	4V @ 380µA
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs	800mOhm @ 1A, 10V	25Ohm @ 170mA, 10V	800mOhm @ 1A, 10V	900mOhm @ 980mA, 10V
Package / Case	TO-261-4, TO-261AA	TO-261-4, TO-261AA	TO-261-4, TO-261AA	TO-261-4, TO-261AA
Vgs (Max)	±20V	±20V	±20V	±20V
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Base Product Number	BSP322	-	-	BSP321
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	4.5V, 10V	4.5V, 10V	10V
FET Type	P-Channel	N-Channel	P-Channel	P-Channel
Series	SIPMOS®	SIPMOS®	SIPMOS®	SIPMOS™
FET Feature	-	-	-	-
Supplier Device Package	PG-SOT223-4	PG-SOT223-4-21	PG-SOT223-4-21	PG-SOT223-4
Gate Charge (Qg) (Max) @ Vgs	16.5 nC @ 10 V	5.9 nC @ 10 V	16.5 nC @ 10 V	12 nC @ 10 V
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Input Capacitance (Ciss) (Max) @ Vds	372 pF @ 25 V	154 pF @ 25 V	372 pF @ 25 V	319 pF @ 25 V
Power Dissipation (Max)	1.8W (Ta)	1.8W (Ta)	1.8W (Ta)	1.8W (Ta)

BSP322PH6327XTSA1 Datasheet PDF

Download BSP322PH6327XTSA1 pdf datasheets and Infineon Technologies documentation for BSP322PH6327XTSA1 - Infineon Technologies.

Other Related Documents: Part Number Guide.pdf
PCN Assembly/Origin: Mult Dev Site Chgs 2/Feb/2023.pdf
PCN Packaging: Mult Dev Cover Tape Chg 9/Mar/2020.pdf Mult Dev Pkg Update 28/May/2020.pdf

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America	United States	5
America	Brazil	7
Europe	Germany	5
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Oceania	Australia	6
Oceania	New Zealand	5
Asia	India	4
Asia	Japan	4
Middle East	Israel	6

DHL & FedEx Shipment Charges Reference
Shipment charges(KG)	Reference DHL(USD$)
0.00kg-1.00kg	USD$30.00 - USD$60.00
1.00kg-2.00kg	USD$40.00 - USD$80.00
2.00kg-3.00kg	USD$50.00 - USD$100.00

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