Manufacturer Part Number
BSP321PH6327XTSA1
Manufacturer
Infineon Technologies
Introduction
High-performance P-channel MOSFET transistor designed for a wide range of applications.
Product Features and Performance
Drain-to-Source Voltage (Vdss) up to 100V
Continuous Drain Current (Id) up to 980mA at 25°C (Tc)
On-State Resistance (Rds(on)) as low as 900mΩ at 980mA, 10V
Input Capacitance (Ciss) of 319pF at 25V
Power Dissipation (Pd) up to 1.8W at 25°C (Ta)
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent power efficiency due to low on-state resistance
Robust design for reliable operation in harsh environments
Compact surface-mount package for space-saving circuit layouts
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
Gate-to-Source Voltage (Vgs): ±20V
Threshold Voltage (Vgs(th)): 4V at 380µA
Gate Charge (Qg): 12nC at 10V
Quality and Safety Features
RoHS3 compliant
Moisture Sensitivity Level (MSL): 1
Compatibility
Compatible with a wide range of electronic devices and circuits
Application Areas
Switching power supplies
Motor control
Battery management systems
Industrial and consumer electronics
Product Lifecycle
This product is currently in active production and not nearing discontinuation.
Replacement or upgrade options are available from Infineon's SIPMOS product portfolio.
Key Reasons to Choose this Product
Excellent power efficiency and low power losses
Robust and reliable performance in harsh environments
Compact surface-mount package for space-saving designs
Wide operating temperature range for versatile applications
RoHS3 compliance for environmentally-friendly use
