BSP318SH6327XTSA1 - Infineon Technologies

Manufacturer Part Number

BSP318SH6327XTSA1

Manufacturer

Infineon Technologies

Introduction

A high-performance N-channel MOSFET transistor with a low on-resistance and fast switching capabilities, suitable for a wide range of power management and control applications.

Product Features and Performance

60V drain-to-source voltage rating

90mOhm maximum on-resistance at 2.6A and 10V

6A continuous drain current at 25°C

380pF maximum input capacitance at 25V

8W maximum power dissipation at 25°C ambient temperature

Fast switching capabilities with 20nC maximum gate charge at 10V

Product Advantages

Excellent power efficiency due to low on-resistance

Reliable operation in high-temperature environments up to 150°C

Compact surface-mount packaging for space-constrained designs

Wide voltage and current handling capabilities

Key Technical Parameters

Drain-to-source voltage (Vdss): 60V

Gate-to-source voltage (Vgs): ±20V

On-resistance (Rds(on)): 90mOhm @ 2.6A, 10V

Continuous drain current (Id): 2.6A at 25°C

Input capacitance (Ciss): 380pF @ 25V

Power dissipation (Ptot): 1.8W at 25°C ambient

Quality and Safety Features

RoHS3 compliant for environmental responsibility

Robust and reliable performance in industrial and automotive applications

Compatibility

Surface-mount TO-261-4 (TO-261AA) package

Compatible with a wide range of power management and control circuits

Application Areas

Power supplies

Motor drives

Switching regulators

Lighting and display controls

Industrial and automotive electronics

Product Lifecycle

Currently in production

No discontinuation or replacement plans announced

Key Reasons to Choose This Product

Excellent power efficiency and thermal performance

Wide voltage and current handling capabilities

Robust and reliable construction for demanding applications

Compact surface-mount packaging for space-constrained designs

RoHS3 compliance for environmental responsibility