Manufacturer Part Number
BSP317PE6327
Manufacturer
Infineon Technologies
Introduction
P-Channel power MOSFET transistor
Product Features and Performance
Drain-Source Voltage (Vdss) up to 250V
On-Resistance (Rds(on)) as low as 4Ω
Continuous Drain Current (Id) up to 430mA
Wide Operating Temperature Range (-55°C to 150°C)
Low Input Capacitance (Ciss) of 262pF
Low Power Dissipation of 1.8W
Product Advantages
Efficient power switching performance
Reliable operation in harsh environments
Compact surface-mount package
Key Technical Parameters
Vdss: 250V
Vgs(max): ±20V
Rds(on): 4Ω @ 430mA, 10V
Id(cont): 430mA @ 25°C
Ciss: 262pF @ 25V
Power Dissipation: 1.8W
Quality and Safety Features
RoHS non-compliant
Compatibility
TO-261-4, TO-261AA package
Application Areas
Power supplies
Motor drives
Lighting control
Industrial applications
Product Lifecycle
This product is an active part, not nearing discontinuation.
Replacement options or upgrades may be available from Infineon Technologies.
Key Reasons to Choose This Product
Excellent power switching performance
Wide operating temperature range
Compact surface-mount package
Reliable operation in harsh environments
Cost-effective solution for power applications
