Manufacturer Part Number
BSP171PH6327XTSA1
Manufacturer
Infineon Technologies
Introduction
This product is a discrete semiconductor device, specifically a P-channel MOSFET transistor.
Product Features and Performance
60V Drain-to-Source Voltage (Vdss)
±20V Gate-to-Source Voltage (Vgs)
300mOhm Maximum On-Resistance (Rds(on)) at 1.9A, 10V
9A Continuous Drain Current (Id) at 25°C
460pF Maximum Input Capacitance (Ciss) at 25V
8W Maximum Power Dissipation at 25°C
-55°C to 150°C Operating Temperature Range
Product Advantages
Low on-resistance for improved efficiency
Wide operating voltage range
Suitable for high-power applications
Compact surface-mount package
Key Technical Parameters
MOSFET technology
P-channel FET type
2V Maximum Gate-to-Source Threshold Voltage (Vgs(th)) at 460A
5V to 10V Drive Voltage range
20nC Maximum Gate Charge (Qg) at 10V
Quality and Safety Features
RoHS3 compliant
Tape and reel packaging
Compatibility
TO-261-4, TO-261AA package
PG-SOT223-4 supplier package
Application Areas
Power management
Motor control
Switching circuits
Industrial electronics
Product Lifecycle
This product is currently in production and is not nearing discontinuation. Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
Excellent performance characteristics, including low on-resistance and wide operating voltage range
Compact surface-mount package for efficient board layout
Suitable for a wide range of high-power applications
Complies with RoHS3 regulations for environmental responsibility