BSP19AT1G - onsemi

Manufacturer Part Number

BSP19AT1G

Manufacturer

onsemi

Introduction

The BSP19AT1G is a high-voltage, high-power NPN bipolar junction transistor (BJT) designed for use in a variety of power control and switching applications.

Product Features and Performance

High voltage capability up to 350V

High power handling up to 800mW

Wide operating temperature range of -65°C to 150°C

High current gain (hFE) of at least 40 at 20mA and 10V

High cutoff current (ICBO) of only 20nA maximum

Low collector-emitter saturation voltage (VCE(sat)) of 500mV at 4mA and 50mA

High transition frequency (fT) of 70MHz

Product Advantages

Excellent for high-voltage and high-power applications

Robust design with wide operating temperature range

Efficient power control and switching performance

Compact SOT-223 (TO-261) surface mount package

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 350V

Collector Current (IC): 100mA

Collector Cutoff Current (ICBO): 20nA

DC Current Gain (hFE): Min 40 @ 20mA, 10V

Transition Frequency (fT): 70MHz

Power Dissipation: 800mW

Quality and Safety Features

Qualified to JEDEC standards for reliability and quality

RoHS compliant for environmental responsibility

Compatibility

Suitable for use in a wide range of power control and switching circuits

Compatible with standard bipolar transistor applications

Application Areas

Power supplies

Motor drives

Lighting controls

Industrial automation

Household appliances

Product Lifecycle

Currently in active production

No immediate plans for discontinuation

Replacement or upgrade options available if needed

Key Reasons to Choose This Product

Excellent high-voltage and high-power capabilities

Robust design with wide operating temperature range

Efficient performance for power control and switching

Compact and space-saving surface mount package

Proven quality and reliability from a trusted manufacturer