BSP125L6327 - Infineon Technologies

Manufacturer Part Number

BSP125L6327

Manufacturer

Infineon Technologies

Introduction

High-performance N-channel MOSFET for power switching applications

Product Features and Performance

Capable of handling high drain-to-source voltage up to 600V

Low on-resistance of 45Ω at 120mA, 10V

Wide operating temperature range from -55°C to 150°C

Fast switching speed with low gate charge of 6.6nC at 10V

Suitable for various power conversion and control applications

Product Advantages

Excellent power efficiency due to low on-resistance

Robust design for high-temperature operation

Fast switching characteristics enable high-frequency operation

Compact surface-mount package for space-saving designs

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 600V

Gate-to-Source Voltage (Vgs): ±20V

Continuous Drain Current (Id): 120mA (at 25°C)

Input Capacitance (Ciss): 150pF (at 25V)

Power Dissipation (Pd): 1.8W (at 25°C)

Quality and Safety Features

RoHS3 compliant for environmental responsibility

Reliable performance and long lifespan

Compatibility

Compatible with various power conversion and control applications, such as switching power supplies, motor drives, and industrial control systems

Application Areas

Switching power supplies

Motor drives

Industrial control systems

Power conversion and control applications

Product Lifecycle

Currently in production

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

High voltage handling capability for demanding applications

Excellent power efficiency and thermal performance

Fast switching characteristics for high-frequency operation

Compact surface-mount package for space-saving designs

Reliable and RoHS3 compliant for long-term use