Manufacturer Part Number
BSP125H6327XTSA1
Manufacturer
Infineon Technologies
Introduction
The BSP125H6327XTSA1 is a N-channel MOSFET transistor from Infineon Technologies, part of the SIPMOS series.
Product Features and Performance
600V drain-to-source voltage (Vdss)
Maximum gate-to-source voltage (Vgs) of ±20V
On-state resistance (Rds(on)) of 45Ω at 120mA, 10V
Continuous drain current (Id) of 120mA at 25°C
Input capacitance (Ciss) of 150pF at 25V
Maximum power dissipation of 1.8W at 25°C
Operating temperature range of -55°C to 150°C
Product Advantages
High breakdown voltage for use in high-voltage applications
Low on-state resistance for efficient power switching
Small surface-mount package for compact designs
Key Technical Parameters
Drain-to-source voltage (Vdss): 600V
Gate-to-source voltage (Vgs): ±20V
On-state resistance (Rds(on)): 45Ω
Continuous drain current (Id): 120mA
Input capacitance (Ciss): 150pF
Power dissipation (Max): 1.8W
Quality and Safety Features
RoHS3 compliant
Suitable for surface mount applications
Compatibility
Compatible with TO-261-4, TO-261AA package types
Tape and reel packaging available
Application Areas
Power supplies
Motor drives
Lighting applications
Industrial control systems
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade options may be available from Infineon
Key Reasons to Choose
High breakdown voltage for high-voltage applications
Low on-state resistance for efficient power switching
Small surface-mount package for compact designs
RoHS3 compliance for environmental safety
Tape and reel packaging for automated assembly
BSP127Freescale / NXP Semiconductors
BSP126LUMILEDS