Manufacturer Part Number
BSC190N15NS3GATMA1
Manufacturer
Infineon Technologies
Introduction
High performance n-channel MOSFET transistor with low on-resistance and high power handling capabilities.
Product Features and Performance
Drain to source voltage up to 150V
On-resistance as low as 19mOhm at 50A, 10V gate voltage
Continuous drain current up to 50A at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 2420pF at 75V
Maximum power dissipation of 125W at 25°C
Product Advantages
Excellent energy efficiency due to low on-resistance
Reliable high power operation
Compact surface mount packaging
Key Technical Parameters
Drain to Source Voltage (Vdss): 150V
Gate to Source Voltage (Vgs): ±20V
Continuous Drain Current (Id): 50A at 25°C
On-Resistance (Rds(on)): 19mOhm at 50A, 10V
Quality and Safety Features
RoHS3 compliant
Suitable for high reliability applications
Compatibility
Can be used in a wide range of power electronics applications including motor drives, power supplies, and industrial controls.
Application Areas
Power conversion
Motor drives
Industrial controls
Power supplies
Product Lifecycle
This is an active product, with no plans for discontinuation. Replacements and upgrades may become available in the future as technology evolves.
Key Reasons to Choose This Product
Excellent power efficiency and high power handling
Compact surface mount package
Reliable operation over a wide temperature range
Suitable for high reliability applications
